SUD50N10-18P features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see applications ? primary side switch ? isolated dc/dc converter notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) 100 0.0185 at v gs = 10 v 50 48 nc s gd top v ie w drain connected to ta b orderin g information: sud50 n 10-1 8 p-e3 (lead (p b )-free) to-252 n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 50 a a t c = 100 c 39 t a = 25 c 8.2 b t a = 100 c 5.8 b pulsed drain current i dm 100 continuous source-drain diode current t c = 25 c i s 50 a t a = 25 c 2 b single pulse avalanche current l = 0.1 mh i as 45 avalanche energy e as 101 mj maximum power dissipation t c = 25 c p d 136.4 w t c = 100 c 68.2 t a = 25 c 3 b t a = 100 c 1.5 b operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b steady state r thja 40 50 c/w maximum junction-to-case r thjc 0.85 1.1 n-channel 100 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 10 vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com n-channel 100 v (d-s), 175 c mosfet features ? trenchfet ? power mosfet ? 100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? primary side switch ? isolated dc/dc converter notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. product summary v ds (v) r ds(on) ( : ) i d (a) a q g (typ.) 100 0.0185 at v gs = 10 v 50 48 nc s gd top v ie w drain connected to ta b orderin g information: sud50 n 10-1 8 p-e3 (lead (p b )-free) to-252 n-channel mosfet g d s absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 50 a a t c = 100 c 39 t a = 25 c 8.2 b t a = 100 c 5.8 b pulsed drain current i dm 100 continuous source-drain diode current t c = 25 c i s 50 a t a = 25 c 2 b single pulse avalanche current l = 0.1 mh i as 45 avalanche energy e as 101 mj maximum power dissipation t c = 25 c p d 136.4 w t c = 100 c 68.2 t a = 25 c 3 b t a = 100 c 1.5 b operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b steady state r thja 40 50 c/w maximum junction-to-case r thjc 0.85 1.1
notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v v ds temperature coefficient ? v ds /t j i d = 250 a 110 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 12.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.015 0.0185 ? forward transconductance a g fs v ds = 15 v, i d = 15 a 33 s dynamic b input capacitance c iss v ds = 50 v, v gs = 0 v, f = 1 mhz 2600 pf output capacitance c oss 230 reverse transfer capacitance c rss 80 total gate charge q g v ds = 50 v, v gs = 10 v, i d = 50 a 48 75 nc gate-source charge q gs 16 gate-drain charge q gd 13 gate resistance r g f = 1 mhz 1.6 2.5 ? tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 1 ? i d ? 50 a, v gen = 10 v, r g = 1 ? 12 20 ns rise time t r 10 20 turn-off delay time t d(off) 18 35 fall time t f 815 drain-source body diode characteristics continuous source-drain diode i s t c = 25 c 50 a pulse diode forward current a i sm 100 body diode voltage v sd i s = 15 a 0.85 1.5 v body diode reverse recovery time t rr i f = 50 a, di/dt = 100 a/s, t j = 25 c 80 120 ns body diode reverse recovery charge q rr 160 240 nc reverse recovery fall time t a 57 ns reverse recovery rise time t b 23 www.freescale.net.cn 2 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 2 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 100 v v ds temperature coefficient ' v ds /t j i d = 250 a 110 mv/c v gs(th) temperature coefficient ' v gs(th) /t j - 12.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 on-state drain current a i d(on) v ds t 5 v, v gs = 10 v 50 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 15 a 0.015 0.0185 : forward transconductance a g fs v ds = 15 v, i d = 15 a 33 s dynamic b input capacitance c iss v ds = 50 v, v gs = 0 v, f = 1 mhz 2600 pf output capacitance c oss 230 reverse transfer capacitance c rss 80 total gate charge q g v ds = 50 v, v gs = 10 v, i d = 50 a 48 75 nc gate-source charge q gs 16 gate-drain charge q gd 13 gate resistance r g f = 1 mhz 1.6 2.5 : tu r n - o n d e l ay t i m e t d(on) v dd = 50 v, r l = 1 : i d # 50 a, v gen = 10 v, r g = 1 : 12 20 ns rise time t r 10 20 turn-off delay time t d(off) 18 35 fall time t f 815 drain-source body diode characteristics continuous source-drain diode i s t c = 25 c 50 a pulse diode forward current a i sm 100 body diode voltage v sd i s = 15 a 0.85 1.5 v body diode reverse recovery time t rr i f = 50 a, di/dt = 100 a/s, t j = 25 c 80 120 ns body diode reverse recovery charge q rr 160 240 nc reverse recovery fall time t a 57 ns reverse recovery rise time t b 23
typical characteristics (25 c, unless otherwise note) output characteristics transconductance on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 012345 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u8v v gs =6 v v gs =7 v 0 15 30 45 60 75 0 1020304050 i d - drain c u rrent (a) - transcond u ctance (s) g fs t c = 25 c t c = 125 c t c = - 55 c 0.00 0.02 0.04 0.06 0.0 8 0.10 4567 8 910 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 150 c i d =15a transfer characteristics on-resistance vs. drain current capacitance 0.0 0.4 0. 8 1.2 1.6 2.0 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 125 c t c = - 55 c t c = 25 c 0.000 0.009 0.01 8 0.027 0.036 0 204060 8 0 100 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v c rss 0 700 1400 2100 2 8 00 3500 0204060 8 0 100 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) www.freescale.net.cn 3 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 3 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise note) output characteristics transconductance on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 012345 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10 v thr u8v v gs =6 v v gs =7 v 0 15 30 45 60 75 0 1020304050 i d - drain c u rrent (a) - transcond u ctance (s) g fs t c = 25 c t c = 125 c t c = - 55 c 0.00 0.02 0.04 0.06 0.0 8 0.10 4567 8 910 - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) t a = 25 c t a = 150 c i d =15a transfer characteristics on-resistance vs. drain current capacitance 0.0 0.4 0. 8 1.2 1.6 2.0 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 125 c t c = - 55 c t c = 25 c 0.000 0.009 0.01 8 0.027 0.036 0 204060 8 0 100 - on-resistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v c rss 0 700 1400 2100 2 8 00 3500 0204060 8 0 100 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf)
typical characteristics (25 c, unless otherwise noted) gate charge source-drain diode forward voltage single pulse power, junction-to-ambient 0 5 10 15 20 0 204060 8 0 100 i d =20a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 8 0 v v ds =50 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c 0 60 120 1 8 0 240 300 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 t a = 25 c on-resistance vs. junction temperature threshold voltage single pulse power, junction-to-case 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =15a v gs =10 v - 2.3 - 1. 8 - 1.3 - 0. 8 - 0.3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma 0 100 200 300 400 500 600 10 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 t c = 25 c www.freescale.net.cn 4 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 4 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) gate charge source-drain diode forward voltage single pulse power, junction-to-ambient 0 5 10 15 20 0 204060 8 0 100 i d =20a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 8 0 v v ds =50 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c 0 60 120 1 8 0 240 300 po w er ( w ) time (s) 10 1000 0.1 0.01 0.001 100 1 t a = 25 c on-resistance vs. junction temperature threshold voltage single pulse power, junction-to-case 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) i d =15a v gs =10 v - 2.3 - 1. 8 - 1.3 - 0. 8 - 0.3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) i d =5ma 0 100 200 300 400 500 600 10 1 1 0 0 . 00.01 time (s) po w er ( w ) 0.1 t c = 25 c
typical characteristics (25 c, unless otherwise noted) ** the power dissipation p d is based on t j(max.) = 175 c, using junction-to-case thermal resist ance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient current derating**, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1.0 10 100 1000 - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 ms 10 ms 1ms t a = 25 c single p u lse limited b yr ds(on) * 1s 10 s 100 s, dc 10 s, 100 s 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) i d - drain c u rrent (a) safe operating area, junction-to-case current derating**, junction-to-case 0.01 0.1 1 10 100 1000 0.1 1.0 10 100 1000 - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 s 100 s t c = 25 c single p u lse limited b yr ds(on) * 100 ms, dc 10 ms 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t c - case temperat u re (c) package limited i d - drain c u rrent (a) www.freescale.net.cn 5 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 5 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) ** the power dissipation p d is based on t j(max.) = 175 c, using junction-to-case thermal resist ance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient current derating**, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1.0 10 100 1000 - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 ms 10 ms 1ms t a = 25 c single p u lse limited b yr ds(on) * 1s 10 s 100 s, dc 10 s, 100 s 0 2 4 6 8 10 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) i d - drain c u rrent (a) safe operating area, junction-to-case current derating**, junction-to-case 0.01 0.1 1 10 100 1000 0.1 1.0 10 100 1000 - drain c u rrent (a) i d v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 s 100 s t c = 25 c single p u lse limited b yr ds(on) * 100 ms, dc 10 ms 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 t c - case temperat u re (c) package limited i d - drain c u rrent (a)
typical characteristics (25 c, unless otherwise noted) ** the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. power derating**, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) po w er ( w ) power derating**, junction-to-case 0 20 40 60 8 0 100 120 140 160 1 8 0 0 25 50 75 100 125 150 175 t c - case temperat u re (c) po w er ( w ) www.freescale.net.cn 6 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 6 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) ** the power dissipation p d is based on t j(max) = 175 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. power derating**, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 150 175 t a -am b ient temperat u re (c) po w er ( w ) power derating**, junction-to-case 0 20 40 60 8 0 100 120 140 160 1 8 0 0 25 50 75 100 125 150 175 t c - case temperat u re (c) po w er ( w )
typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =50 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance single p u lse 0.1 10 -3 10 -2 1 10 -1 10 -4 0.02 0.05 www.freescale.net.cn 7 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet vishay siliconix SUD50N10-18P document number: 69846 s12-1958-rev. d, 13-aug-12 www.vishay.com 7 typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69846 . normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja =50 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted d u ty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty cycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance single p u lse 0.1 10 -3 10 -2 1 10 -1 10 -4 0.02 0.05
to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347 www.freescale.net.cn 8 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix
recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index www.freescale.net.cn 9 / 10 SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
www.freescale.net.cn 10 / 10 disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some freestyle documentation may still make reference to rohs directive 2002/95/ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. SUD50N10-18P n-channel 100 v (d-s) 175 c mosfet legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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